FP420DigiMain.h

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#ifndef FP420DigiMain_h
#define FP420DigiMain_h

#include "FWCore/ParameterSet/interface/ParameterSet.h"
#include <string>

#include "DataFormats/FP420Digi/interface/DigiCollectionFP420.h"
#include "DataFormats/FP420Digi/interface/HDigiFP420.h"

//#include "SimG4CMS/FP420/interface/FP420G4HitCollection.h"
//#include "SimG4CMS/FP420/interface/FP420G4Hit.h"
#include "SimDataFormats/TrackingHit/interface/PSimHit.h"
//#include "SimDataFormats/TrackingHit/interface/PSimHitContainer.h"

#include "SimRomanPot/SimFP420/interface/CDividerFP420.h"
#include "SimRomanPot/SimFP420/interface/ChargeDividerFP420.h"
#include "SimRomanPot/SimFP420/interface/ChargeDrifterFP420.h"

#include "SimRomanPot/SimFP420/interface/GaussNoiseFP420.h"
#include "SimRomanPot/SimFP420/interface/GaussNoiseProducerFP420.h"

#include "SimRomanPot/SimFP420/interface/DigiConverterFP420.h"
#include "SimRomanPot/SimFP420/interface/ZeroSuppressFP420.h"
//#include "SimRomanPot/SimFP420/interface/HDigiFP420.h"
#include "SimG4CMS/FP420/interface/FP420NumberingScheme.h"
#include <iostream>
#include <vector>

class FP420DigiMain {
  //       interface   interface    interface:
public:
  typedef std::map<int, float, std::less<int>> hit_map_type;
  typedef float Amplitude;

  typedef DConverterFP420::DigitalMapType DigitalMapType;
  typedef PileUpFP420::HitToDigisMapType HitToDigisMapType;

  FP420DigiMain(const edm::ParameterSet &conf);
  // FP420DigiMain();
  ~FP420DigiMain();

  // Runs the algorithm
  //  void run(const std::vector<PSimHit*> &input, DigiCollectionFP420
  //  &output,StripGeomDetUnit *det,GlobalVector);
  std::vector<HDigiFP420> run(const std::vector<PSimHit> &input, const G4ThreeVector &, unsigned int);
  // vector <HDigiFP420>  run(const std::vector<PSimHit> &input, G4ThreeVector,
  // unsigned int, int);

private:
  int ndigis;
  std::vector<short int> adcVec;

  edm::ParameterSet conf_;
  // Const Parameters needed by:
  //-- primary ionization
  int NumberOfSegments, verbosity, xytype;  //
  // go from Geant energy GeV to number of electrons

  //-- drift
  float Sigma0;    //=0.0007  // Charge diffusion in microns for 300 micron Si
  float Thick300;  //=0.0300cm     or = 0.300 mm  - define 300microns for
                   // normalization

  //-- induce_signal
  float ClusterWidth;  // Gaussian charge cutoff width in sigma units
  // Should be rather called CutoffWidth?

  //-- make_digis
  float theElectronPerADC;  // Gain, number of electrons per adc count.   =  3600
  double thez420;
  double thezD2;
  double thezD3;
  float ENC;                   // Equivalent noise charge   = 50
  int theAdcFullScale;         // Saturation count, 255=8bit.   = 35000
  float theNoiseInElectrons;   // Noise (RMS) in units of electrons.  = 500
  float theStripThreshold;     // Strip threshold in units of noise.  = 5
  float theStripThresholdInE;  // Strip noise in electorns.  = 2500
  //  bool peakMode; //  = false;
  bool noNoise;         //  = false;
  bool addNoisyPixels;  //  = true ;
  bool theApplyTofCut;

  float elossCut;
  double tofCut;
  float theThreshold;  // ADC threshold   = 2

  double pitchX;   // pitchX
  double pitchY;   // pitchY
  double pitch;    // pitch automatic
  double pitchXW;  // pitchX
  double pitchYW;  // pitchY
  double pitchW;   // pitch automatic

  double ldriftX;  // ldriftX
  double ldriftY;  // ldriftY
  double ldrift;   // ldrift automatic

  double depletionVoltage;       //  =   25.0       !depletion voltage [V]
  double appliedVoltage;         //  =   45.0       !bias voltage      [V]
  double chargeMobility;         //  = 480.0  !holes    mobility [cm**2/V/sec] p-side;
                                 //  = 1350.0 !electron mobility - n-side
  double temperature;            //  =
  bool noDiffusion;              //  =   true
  double chargeDistributionRMS;  //  =  5
                                 /*
                                    DH     =   12.3       !diffusion const for holes     [cm**2/sec]
                                    DE     =   34.6       !diffusion const for electrons [cm**2/sec]
                              
                                    TGAP   = MUH*BFIELD   !tangent of Lorentz angle for holes
                                    TGAN   = MUE*BFIELD   !tangent of Lorentz angle for electrons
                                    W      =    0.0036    !average deposited energy per e-h pair [keV]
                                    CMB    =    1.6E-19   !electron charge [Coulombs]
                                    CAP    =   10.0E-15
                                    GAINP  = 3588.7
                                    GAINN  = 3594.8
                              */
  ChargeDrifterFP420 *theCDrifterFP420;
  /*
            interface/
    ChargeDrifterFP420.h
    CDrifterFP420.h
    EnergySegmentFP420.h
    AmplitudeSegmentFP420.h
            src/
    ChargeDrifterFP420.cc
  */
  CDividerFP420 *theCDividerFP420;
  /*
            interface/
            CDividerFP420.h
            EnergySegmentFP420.h
  */
  /*
            interface/
            ChargeDividerFP420.h
            LandauFP420.h
            src/
            ChargeDividerFP420.cc
            LandauFP420.cc
  */
  /*
              interface/
              IChargeFP420.h
              InduceChargeFP420.h
              src/
              InduceChargeFP420.cc
  */

  GaussNoiseFP420 *theGNoiseFP420;
  PileUpFP420 *thePileUpFP420;
  HitDigitizerFP420 *theHitDigitizerFP420;
  ZeroSuppressFP420 *theZSuppressFP420;
  DigiConverterFP420 *theDConverterFP420;

  int theStripsInChip;  // num of columns per APV (for strip ineff.)

  int numStripsX;   // number of Xstrips in the module
  int numStripsY;   // number of Ystrips in the module
  int numStrips;    // number of strips in the module
  int numStripsXW;  // number of Xstrips in the module
  int numStripsYW;  // number of Ystrips in the module
  int numStripsW;   // number of strips in the module

  //  int numStripsMax;    // max number of strips in the module
  float moduleThickness;  // plate thickness

  void push_digis(const DigitalMapType &, const HitToDigisMapType &, const PileUpFP420::signal_map_type &);

  //-- calibration smearing
  bool doMissCalibrate;     // Switch on the calibration smearing
  float theGainSmearing;    // The sigma of the gain fluctuation (around 1)
  float theOffsetSmearing;  // The sigma of the offset fluct. (around 0)

  // The PDTable
  //  HepPDTable *particleTable;

  //-- charge fluctuation
  double tMax;  // The delta production cut, should be as in OSCAR = 30keV
                //                                           cmsim = 100keV
  // The eloss fluctuation class from G4. Is the right place?
  LandauFP420 fluctuate;               //
  GaussNoiseProducerFP420 *theNoiser;  //
  std::vector<const PSimHit *> ss;     // ss - pointers to hit info of PSimHit

  void fluctuateEloss(
      int particleId, float momentum, float eloss, float length, int NumberOfSegments, float elossVector[]);

  //  std::vector<HDigiFP420> internal_coll; //empty vector of HDigiFP420 used
  //  in digitize // AZ

  std::vector<HDigiFP420> digis;

  //  std::vector<HDigiFP420> digitize(StripGeomDetUnit *det);    // AZ
  //  int rn0,pn0,sn0;
};

// end of interface

#endif